Circuit arrangement, electrical system, and method for ascertaining barrier layer temperatures of gate-controlled semiconductor components

An electrical system, comprising:

• a circuit arrangement for ascertaining barrier layer temperatures of gate-controlled semiconductor components, including:
• a first semiconductor component;
• a second semiconductor component;
• a gate control circuit;
• a first current measuring device;
• a second current measuring device;
• and
• an evaluation unit,
• wherein
• the first semiconductor component and the second semiconductor component are gate-controlled semiconductor components that are connected in parallel to one another, so that a respective conductance of the first and second semiconductor components is settable by the gate control circuit,
• the gate control circuit is configured to, at least within a predefined time period, in an active forward mode of the first and second semiconductor components, vary a first gate voltage of the first semiconductor component using a first signal, and vary a second gate voltage of the second semiconductor component using a second signal that is opposite the first signal, a total conductance of the first and second semiconductor components that results from the parallel connection remaining essentially constant,
• the evaluation unit is configured to:
• detect a first gate current of the first semiconductor component using the first current measuring device, and detect a second gate current of the second semiconductor component using the second current measuring device, and
• ascertain, based on the varied first and second gate voltages, respectively, and the first and second gate currents, respectively, a respective barrier layer temperature of the first semiconductor component and of the second semiconductor component;
• wherein the electrical system is configured to operate the first semiconductor component and the second semiconductor component, at least temporarily, repeatedly, in the forward mode.