SiC ingot and SiC wafer

A SiC ingot, comprising:

• a seed crystal;
• and
• a single crystal grown on the seed crystal,
• wherein the single crystal has therein one or more micropipes passing through the single crystal in a growth direction, and impurities that are nitrogen, boron, aluminum, titanium, and vanadium, and
• when photoluminescence observation is performed on a plurality of wafers cut out from the single crystal in a direction intersecting the growth direction, an S/N ratio of the one or more micropipes in a first wafer cut out of the plurality of wafers, which is closest to the seed crystal, is higher than an S/N ratio of the one or more micropipes in a second wafer cut out from a position further away from the seed crystal than the first wafer,
• the S/N ratio of the one or more micropipes in the first wafer is 1.5 or more,
• the S/N ratio of the one or more micropipes in the second wafer is 0.75 or less, and
• wherein a concentration difference between impurity concentrations in a first region corresponding to the first wafer and impurity concentrations in a second region corresponding to the second wafer, which is 10 mm or more away from the first region in the growth direction, satisfies the following relationships:
• impurity concentration difference of titanium:
• 1×1016 impurity atoms/cm3 or more
• impurity concentration difference of vanadium:
• 1×1014 impurity atoms/cm3 or more, and
• in the single crystal, impurity concentrations on the outermost surface on the terminal side in the growth direction satisfy the following relationships:
• impurity concentration of titanium:
• 1×1015 impurity atoms/cm3 or more
• impurity concentration of vanadium:
• 1×1014 impurity atoms/cm3 or more
• a total impurity concentration of the impurities in the first region is higher than that in the second region, and
• the total impurity concentration of the first region is 1×1014 impurity atoms/cm3 or more and the total impurity concentration of the second region is 2×1019 impurity atoms/cm3 or less.