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US 12,680,188 B2Granted
Open Czochralski furnace for single crystal growth
AssigneeBoya Advanced Materials Co., Ltd.
InventorsYu Wang, Weiming Guan, Zhenxing Liang
Life of this patent
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Abstract
The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a drum; a filler filled in the drum and configured to support a crucible; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the drum; and a cover plate mounted on a top of the temperature filed device and covering a top end of the drum.
Claims20
An apparatus for crystal growth, comprising a furnace chamber, wherein
- the furnace chamber is a non-closed structure,
- the furnace chamber includes a furnace body, a furnace cover, and a cooling structure, and
- the cooling structure is mounted on a sidewall of the furnace body and the furnace cover.
A furnace chamber for crystal growth, comprising a furnace body, a furnace cover, and a cooling structure, wherein
- the furnace chamber is a non-closed structure,
- the cooling structure is mounted on a sidewall of the furnace body and the furnace cover.
Dependencies are inferred from the claim text.