High-voltage bidirectional switch device with improved electrical characteristics
AssigneeSTMicroelectronics International N.V.
InventorsMarco Zamprogno, Pasquale Flora, Fabio Severini
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AssigneeSTMicroelectronics International N.V.
InventorsMarco Zamprogno, Pasquale Flora, Fabio Severini
Estimating the term…
A switch device is described, formed by: a first switch MOS transistor, with its drain terminal connected to a first switch terminal, source terminal connected to an internal source node and gate terminal connected to an internal gate node; a second switch MOS transistor, with its drain terminal connected to a second switch terminal, source terminal connected to the internal source node and gate terminal connected to the internal gate node; and a voltage limiting element connected between the internal gate and source nodes. A driving stage, voltage-referred to the internal source node, drives the switching of the bidirectional switch, as a function a first and a second driving signals, and has a driving transistor and a switching transistor connected to each other in inverter configuration.
A switch device, comprising:
A charge recovery resonant driver, comprising:
A method, comprising:
Dependencies are inferred from the claim text.