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US 12,652,037 B2Granted
Battery management system equipped with parking to prevent parasitic leakage
AssigneeKeyTek Semiconductor HongKong Limited
InventorDavid Maes
Life of this patent
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Abstract
Systems and methods for reducing parasitic current leakage. A switch includes a source resistor, a first transistor, a second transistor, and a midpoint transistor. The midpoint transistor is located in between the first transistor and the second transistor. The midpoint transistor is maintained at a low voltage in response to the switch being in a non-conductive state, and the low voltage is less than or equal to an output voltage of the switch.
Claims21
A switch comprising:
- a source resistor;
- a first transistor, wherein the first transistor is a metal-oxide-semiconductor field-effect (MOSFET) transistor;
- a second transistor, wherein the second transistor is a MOSFET transistor;
- and
- a midpoint transistor, wherein the midpoint transistor is a MOSFET transistor, and wherein the midpoint transistor is located in between the first transistor and the second transistor;
- wherein the midpoint transistor is maintained at a low voltage in response to the switch being in a non-conductive state;
- and
- wherein the low voltage is less than or equal to an output voltage of the switch;
- wherein the first transistor comprises:
- a first gate;
- a first source terminal;
- and
- a first drain/N-iso terminal;
- and
- wherein the second transistor comprises:
- a second gate;
- a second source terminal;
- and
- a second drain/N-iso terminal.
16 more elements
A switch comprising:
- a source resistor;
- a first transistor, wherein the first transistor is a metal-oxide-semiconductor field-effect (MOSFET) transistor;
- a second transistor, wherein the second transistor is a MOSFET transistor;
- and
- a midpoint transistor, wherein the midpoint transistor is a MOSFET transistor, and wherein the midpoint transistor is located in between the first transistor and the second transistor;
- wherein the midpoint transistor is maintained at a low voltage in response to the switch being in a non-conductive state;
- and
- wherein the low voltage is less than or equal to an output voltage of the switch;
- wherein the switch comprises a multiplexer voltage output that is in direct electrical communication with the second transistor;
- and
- wherein the switch comprises two voltage inputs comprising:
- a first voltage input in direct electrical communication with the first transistor;
- and
- a midpoint voltage input in direct electrical communication with the midpoint transistor.
11 more elements
A switch comprising:
- a source resistor;
- a first transistor, wherein the first transistor is a metal-oxide-semiconductor field-effect (MOSFET) transistor;
- a second transistor, wherein the second transistor is a MOSFET transistor;
- and
- a midpoint transistor, wherein the midpoint transistor is a MOSFET transistor, and wherein the midpoint transistor is located in between the first transistor and the second transistor;
- wherein the midpoint transistor is maintained at a low voltage in response to the switch being in a non-conductive state;
- and
- wherein the low voltage is less than or equal to an output voltage of the switch;
- wherein maintaining the midpoint transistor at the low voltage prevents activation of a parasitic positive-negative-positive (PNP) transistor within either of the first transistor or the second transistor.
6 more elements
Dependencies are inferred from the claim text.