Silicon controlled rectifiers with field plate
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorJie Zeng
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to silicon controlled rectifiers with field plate structures and methods of manufacture. The structure includes: a plurality of wells of a first type in a semiconductor substrate; a well of a second type in the semiconductor substrate, the well of the second type surrounding the plurality of wells of the first type; an isolation structure surrounding the plurality of wells of the first type, the isolation structure isolating the well of the second type from the plurality of wells of the first type; and a plurality of field plates on the isolation structure, the plurality of field plates surround the plurality of wells of the first type.
Claims20
A structure comprising:
- a plurality of wells of a first type in a semiconductor substrate;
- a well of a second type in the semiconductor substrate, the well of the second type surrounding each of the plurality of wells of the first type such that the well of the second type is provided between adjacent wells of the plurality of wells of the first type;
- an isolation structure surrounding the plurality of wells of the first type, the isolation structure completely covering the well of the second type provided between the adjacent wells of the plurality of wells of the first type and extending onto the adjacent wells of the plurality of wells of the first type, the isolation structure further isolating the well of the second type from the plurality of wells of the first type;
- a plurality of field plates on the isolation structure, the plurality of field plates surround the plurality of wells of the first type;
- and
- an additional well of the first type within the plurality of wells, the additional well having a lower doping concentration than the plurality of wells.
A structure comprising:
- a plurality of P-wells in a semiconductor substrate;
- an N-well isolating the plurality of P-wells by surrounding each of the plurality of P-wells;
- an isolation structure surrounding the plurality of P-wells and isolating the plurality of P-wells from the N-well;
- field plates on the isolation structure, the field plates forming a ring about the plurality of P-wells;
- and
- an additional P-well within the plurality of P-wells, the additional P-well having a lower doping concentration than the plurality of P-wells.
A method comprising:
- forming a plurality of wells of a first type in a semiconductor substrate;
- forming a well of a second type in the semiconductor substrate, the well of the second type surrounding each of the plurality of wells of the first type such that the well of the second type is provided between adjacent wells of the plurality of wells of the first type;
- forming an isolation structure surrounding the plurality of wells of the first type, the isolation structure completely covering the well of the second type provided between the adjacent wells of the plurality of wells of the first type and extending onto the adjacent wells of the plurality of wells of the first type, the isolation structure further isolating the well of the second type from the plurality of wells of the first type;
- forming a plurality of field plates on the isolation structure, the plurality of field plates surround the plurality of wells of the first type;
- and
- forming an additional well of the first type within the plurality of wells, the additional well having a lower doping concentration than the plurality of wells, and a top surface of the additional well being above a top surface of the plurality of wells.
Dependencies are inferred from the claim text.