Semiconductor devices with voltage adjustment

A semiconductor device comprising:

• a voltage clamp circuit including a plurality of circuit elements configured to operate based on receiving a voltage having a first level, the voltage clamp circuit being configured to
• receive an external input signal having a first swing that is more than twice the first level, and
• output a clamp signal having a second swing that is less than or equal to the first level by adjusting a voltage level of the external input signal;
• and
• a level down shifter circuit configured to output an internal input signal by adjusting a voltage level of the clamp signal,
• wherein a maximum voltage level of the clamp signal is lower than a maximum voltage level of the external input signal,
• wherein a minimum voltage level of the clamp signal is higher than a minimum voltage level of the external input signal, and
• wherein a swing of the clamp signal is equal to a swing of the internal input signal.

A semiconductor device comprising:

• a receiving circuit connected to an input pad and configured to
• receive an external input signal having a first swing that is more than twice a first level through the input pad, and
• generate an internal input signal having a second swing that is less than or equal to the first level by reducing the first swing of the external input signal and a maximum voltage level of the external input signal;
• and
• a core circuit including a plurality of circuit elements configured to operate based on receiving a voltage having the first level, the core circuit being configured to receive the internal input signal,
• wherein a plurality of transistors included in the receiving circuit and the core circuit include a gate insulating layer having a same thickness, and
• wherein a maximum power supply voltage that each of the plurality of transistors is configured to receive is less than half the first swing of the external input signal.