Extreme ultraviolet mask with capping layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Chang Lee, Pei-Cheng Hsu, Wei-Hao Lee, Ping-Hsun Lin, Ta-Cheng Lien, Ching-Fang Yu
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Abstract
An extreme ultraviolet (EUV) mask, includes a substrate, a reflective multilayer stack on the substrate, and a single layer or multi-layer capping feature on the reflective multilayer stack. The capping feature includes a capping layer or capping layers including a material having an amorphous structure. Other described embodiments include capping layer(s) that contain element(s) having a first solid carbon solubility less than about 3. In multilayer capping feature embodiments, element(s) of the respective capping layers have different solid carbon solubility properties.
Claims20
An extreme ultraviolet (EUV) mask, comprising:
- a substrate;
- a reflective multilayer stack on the substrate;
- a capping feature on the reflective multilayer stack, the capping feature including a first capping layer including a material having an amorphous structure, wherein the material of the first capping layer is an alloy selected from the group consisting of IrZr, RhZr, HfZr, NbZr and ZnZr;
- and
- a patterned absorber layer on the capping feature.
An extreme ultraviolet (EUV) mask, comprising:
- a substrate;
- a reflective multilayer stack on the substrate;
- a multi-layer capping feature on the reflective multilayer stack, the multi-layer capping feature including a first capping layer including a first alloy and a second capping layer including a second alloy different from the first alloy, wherein the first alloy and the second alloy are independently selected from the group consisting of PtIr, NbIr, RhN, IrN, PtIrN, NbIrN, NbPtN and NbRhN;
- and
- a patterned absorber layer on the multi-layer capping feature.
An extreme ultraviolet (EUV) mask, comprising:
- a substrate;
- a reflective multilayer stack on the substrate;
- a capping feature on the reflective multilayer stack, the capping feature including a layer of a first material including an element having a solid carbon solubility, at an eutectic point of a system of the element and carbon, that is less than 3 atomic %, wherein the first material of the capping feature is an alloy selected from the group consisting of IrZr, RhZr, HfZr, NbZr, PtIr, NbIr, RhN, IrN, PtIrN, NbIrN, NbPtN and NbRhN;
- and
- a patterned absorber layer on the capping feature.
Dependencies are inferred from the claim text.