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US 12,643,985 B2Granted
Gas barrier film and method for manufacturing gas barrier film
AssigneeLintec Corporation
InventorsNana Shindo, Satoshi Naganawa
Life of this patent
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Abstract
Provided are a gas barrier film and manufacturing methods for making the gas barrier film. The gas barrier film includes a gas barrier layer containing silicon and oxygen as main components. The gas barrier layer has a region in the thickness direction containing silicon, oxygen, and nitrogen. The region has an element ratio of nitrogen of 5 at % or greater and a thickness of 30 nm or greater.
Claims5
A gas barrier film, comprising:
- a gas barrier layer, on a base material film, containing silicon and oxygen as main components,
- wherein
- the gas barrier layer has a high nitrogen-content region and a low nitrogen-content region in a thickness direction,
- the high nitrogen-content region contains silicon, oxygen, and nitrogen, and has an element ratio of nitrogen of 5 at % or greater,
- the low nitrogen-content region has an element ratio of nitrogen smaller than 5 at %,
- the high nitrogen-content region has a thickness dM of 40.7 nm or greater and 65 nm or smaller, and
- the high nitrogen-content region, the low nitrogen-content region, and the base material film are arranged in this order from a surface of the gas barrier layer.
4 more elements
Dependencies are inferred from the claim text.