Power electronics device and sensing method for a GaN die included in the power electronics device

A sensing method for a GaN (gallium nitride) die that includes a main GaN power transistor, a first GaN current sense transistor having a source electrically connected to a second current sense terminal of the GaN die and a drain electrically connected to a drain of the main GaN power transistor, a second GaN current sense transistor having a source electrically connected to a source of the main GaN power transistor, a diode device electrically connected in series between the drain of the main GaN power transistor and a drain of the second GaN current sense transistor, and a voltage protection device electrically connecting the drain of the second GaN current sense transistor to a first current sense terminal of the GaN Die, the sensing method comprising:

• sensing a scaled-down replica of current flowing in the main GaN power transistor based on a voltage at the first current sense terminal of the GaN die and a voltage at the second current sense terminal of the GaN die;
• detecting when the main GaN power transistor is in saturation based on the voltage at the first current sense terminal of the GaN die and a first reference voltage;
• and
• detecting when the drain current of the main GaN power transistor exceeds a predetermined value based on the voltage at the second current sense terminal of the GaN die and a second reference voltage.