Block copolymer for lithography and lithography method using the same
AssigneeIndustry-Academic Cooperation Foundation, Yonsei University
InventorsDu Yeol Ryu, Hui Il Jeon, Seungbae Jeon, Seungyun Jo
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Abstract
The inventive concept relates to a block copolymer for lithography, capable of self-assembling and self-healing, and more particularly, to a block copolymer including a first block which is a repeating unit of polymerized siloxane and a second block which is a repeating unit of polymerized alkyl azobenzene acrylate. The alkyl is a linear or branched chain of 1 to 10 carbon atoms, the number (x) of the repeating unit of polymerized siloxane is about 60 to about 80, and the number (y) of the repeating unit of polymerized alkyl azobenzene acrylate is about 15 to about 25. The block copolymer has a cylindrical phase.
Claims20
A block copolymer for lithography, the block copolymer comprising:
- a first block comprising a first repeating unit of Formula 1;
- and
- a second block comprising a second repeating unit of Formula 2:
- R1 and R2 are each independently hydrogen or a linear or branched C1-C10 alkyl group, and
- “x” is an integer between 60 and 80,
- R3 is a linear or branched C1-C10 alkyl group,
- “y” is an integer between 15 and 25, and
- the block copolymer has a cylindrical phase.
A method for lithography comprising:
- forming a polymer layer comprising a block copolymer on a substrate;
- applying an electric field to the polymer layer to form a first nanostructure and a second nanostructure, the first nanostructure and the second nanostructure extending in a first direction and parallel to each other;
- and
- selectively removing the first nanostructure,
- wherein the block copolymer comprises:
- a first block including a repeating unit of polymerized siloxane;
- and
- a second block including a repeating unit of polymerized alkyl azobenzene acrylate,
- the alkyl is a linear or branched chain of 1 to 10 carbon atoms,
- a number (x) of the repeating unit of the polymerized siloxane is 60 to 80,
- a number (y) of the repeating unit of the alkyl azobenzene acrylate is 15 to 25,
- the first nanostructure comprises the first block, and
- the second nanostructure comprises the second block.
A method of manufacturing a semiconductor device, the method comprising:
- forming transistors on a substrate;
- and
- forming wirings on the transistors, the wirings extending in a first direction,
- wherein the forming of the wirings comprises:
- forming an etch target layer on the transistors;
- forming a polymer layer comprising a block copolymer on the etch target layer;
- applying an electric field to the polymer layer to form first nanostructures and second nanostructures, the first nanostructures and the second nanostructures extending in the first direction and parallel to each other;
- selectively removing the first nanostructures;
- and
- patterning the etch target layer using the second nanostructures as an etching mask,
- the block copolymer comprises:
- a first block including a polymer of a silicon (Si) backbone;
- and
- a second block including a repeating unit of polymerized monomers, each of the monomers comprising azobenzene,
- a ratio of a volume of the first block to a volume of the block copolymer is about 0.45 to about 0.55,
- each of the first nanostructures comprises the first block, and
- each of the second nanostructures comprises the second block.
Dependencies are inferred from the claim text.