Repair method for photomask defects
AssigneeIntel Corporation
InventorsJuan Pablo Oviedo Robles, Raja Katta
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Abstract
The present disclosure is directed to a repair method including providing a scanning electron microscope (SEM) with an electron beam directed at a defective multilayer photomask disposed in the SEM; disposing a droplet of a liquid precursor on a surface of the defective multilayer photomask with a defect; pointing a gas flow on the droplet, wherein the gas flow is configured to planarize the droplet; and repairing the defect in the defective multilayer photomask by performing a chemical reaction on the planarized droplet. A photomask repair system and a photomask repair tool is also provided.
Claims20
A repair method comprising:
- providing a scanning electron microscope (SEM) with an electron beam directed at a defective multilayer photomask disposed in the SEM;
- disposing a droplet of a liquid precursor on a surface of the defective multilayer photomask that is a site of a defect;
- applying a gas flow pulse on the droplet, wherein the gas flow pulse is configured to planarize the droplet, and wherein the gas flow pulse comprises a moisturized gas configured to avoid evaporation of the liquid precursor;
- and
- repairing the defect in the defective multilayer photomask by performing a chemical reaction on the planarized droplet.
A photomask repair system comprising:
- a scanning electron microscope (SEM);
- a first liquid injection system positioned to deposit a droplet of a liquid precursor on a defective multilayer photomask;
- a gas injection system positioned to apply a gas flow pulse on the droplet, wherein the gas flow pulse is configured to planarize the droplet, and wherein the gas injection system comprises a vapor pressure injection structure configured to introduce moisture to the gas flow pulse to avoid evaporation of the liquid precursor;
- and
- an electron beam configured to perform an electron-beam-induced electrochemical reaction on the planarized droplet.
A photomask repair tool comprising:
- an environmental scanning electron microscope (ESEM) comprising:
- a vacuum chamber and an electron beam;
- a first liquid injection system configured to deposit a droplet of a liquid precursor on a defect on an extreme ultraviolet (EUV) photomask;
- and
- a gas injection system configured to apply a gas flow pulse on the EUV photomask within the vacuum chamber and positioned in a distance of approximately from 200 μm to 400 μm from the EUV photomask,
- wherein the gas injection system comprises a vapor pressure injection structure configured to introduce moisture to the gas flow pulse to avoid evaporation of the liquid precursor.
Dependencies are inferred from the claim text.