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US 12,618,152 B2Granted
Method of depositing a transition metal dichalcogenide
AssigneesImec Vzw, Katholieke Universiteit Leuven
InventorsBenjamin Groven, Vladislav Voronenkov, Dries Vranckx
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Abstract
In one aspect, a method of depositing a transition metal dichalcogenide is provided. The method includes depositing a layer of the transition metal dichalcogenide on a substrate by a metalorganic chemical vapor deposition process including exposing the substrate to a mixture of reactant gases including a transition metal precursor and a chalcogen precursor. The mixture further includes a gas-phase halogen-based reactant to volatilize transition metal adatoms deposited on the substrate.
Claims17
A method of depositing a transition metal dichalcogenide, the method comprising:
- depositing a layer of the transition metal dichalcogenide on a substrate by a metalorganic chemical vapor deposition process comprising exposing the substrate to a mixture of reactant gases comprising a transition metal precursor and a chalcogen precursor,
- wherein the mixture further comprises a gas-phase halogen-based reactant to volatilize transition metal adatoms deposited on the substrate, and
- wherein in the metalorganic chemical vapor deposition process, a deposition temperature and a gas-phase halogen-based reactant concentration of the mixture are such that a desorption flux from the substrate exceeds a net condensation flux to the substrate.
Dependencies are inferred from the claim text.