Semiconductor device with improved channel mobility

A semiconductor memory device, comprising:

• a stacked body of conductor layers and insulator layers alternately stacked in a first direction;
• and
• a columnar body extending through the stacked body in the first direction, wherein
• the columnar body includes:
• a first insulating core layer extending in the first direction, the first insulating core layer comprising aluminum oxide,
• a semiconductor film extending in the first direction, the semiconductor film being between the first insulating core layer and the conductor layers of the stacked body in a second direction perpendicular to the first direction,
• a charge storage film between the semiconductor film and the conductor layers in the second direction,
• a second insulating core layer extending in the first direction, the second insulating core layer being between the semiconductor layer and the first insulating core layer and comprising silicon oxide, and
• a third insulating core layer comprising silicon oxide, the first insulating core layer being between the third insulating core layer and the second insulating core layer, and
• nitrogen is present at an interface between the semiconductor layer and the second insulating core layer.