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US 12,615,757 B2Granted
Semiconductor isolation bridge for three-dimensional dynamic random-access memory
AssigneeApplied Materials, Inc.
InventorFredrick Fishburn
Life of this patent
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Abstract
Semiconductor devices and methods of manufacturing the same are described. The methods form a 3D DRAM architecture that includes a semiconductor isolation bridge, eliminating a floating body effect. The method includes forming an epitaxial layer in a deep trench isolation opening and creating a semiconductor isolation bridge between adjacent deep trench isolation openings.
Claims20
A method of forming a semiconductor memory device, the method comprising:
- etching a plurality of openings in a memory stack on a substrate to form at least one deep trench isolation opening, at least one word line opening, and at least one P-substrate opening, the memory stack comprising alternating layers of a first material layer and a second material layer and the plurality of openings extending from a top surface of the memory stack into the substrate;
- depositing a first oxide layer in each of the at least one deep trench isolation opening, the at least one word line opening, and the at least one P-substrate opening;
- selectively removing the first oxide layer from the at least one P-substrate opening;
- forming an epitaxial layer in the at least one P-substrate opening, the epitaxial layer doped with boron;
- enlarging the at least one deep trench isolation opening;
- depositing a second oxide layer in the at least one deep trench isolation opening;
- depositing a nitride layer in the at least one deep trench isolation opening and on the second oxide layer;
- removing the first oxide layer from the at least one word line opening;
- and
- forming a word line gate in the at least one word line opening.
7 more elements
A method of forming a semiconductor memory device, the method comprising:
- depositing a first oxide layer in each of at least one deep trench isolation opening, at least one word line opening, and at least one P-substrate opening in a memory stack, the memory stack comprising alternating layers of a first material layer and a second material layer;
- selectively removing the first oxide layer from the at least one P-substrate opening;
- forming an epitaxial layer in the P-substrate opening, the epitaxial layer doped with boron;
- forming a bridge between adjacent deep trench isolation openings;
- depositing a second oxide layer in the at least one deep trench isolation opening;
- depositing a nitride layer in the at least one deep trench isolation opening and on the second oxide layer;
- depositing a high-K layer in the P-substrate opening on a top surface of the epitaxial layer;
- removing the first oxide layer from the at least one word line opening;
- and
- forming a word line gate in the at least one word line opening.
7 more elements
Dependencies are inferred from the claim text.