Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorsSeung Hwan Kim, Seok Pyo Song
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes: forming a stack body including first sacrificial layer structures, preliminary horizontal layers, and second sacrificial layer structures over a lower structure; forming a main hard mask layer over the stack body; forming a mesh-shaped hard mask pattern over the main hard mask layer; forming a main hard mask pattern by etching the main hard mask layer using the mesh-shaped hard mask pattern as an etch barrier; forming a plurality of isolation openings by etching the stack body using the main hard mask pattern as an etch barrier; and forming a plurality of isolation layers that fill the isolation openings.
Claims17
A method for fabricating a semiconductor device, comprising:
- forming a stack body including first sacrificial layer structures, preliminary horizontal layers, and second sacrificial layer structures over a lower structure;
- forming a main hard mask layer over the stack body;
- forming a mesh-shaped hard mask pattern over the main hard mask layer;
- forming a main hard mask pattern by etching the main hard mask layer using the mesh-shaped hard mask pattern as an etch barrier;
- forming a plurality of isolation openings by etching the stack body using the main hard mask pattern as an etch barrier;
- and
- forming a plurality of isolation layers that fill the isolation openings.
A method for fabricating a semiconductor device, comprising:
- forming an etch target layer including silicon germanium layers and monocrystalline silicon layers over a lower structure;
- forming a main hard mask layer over the etch target layer;
- forming a multi-level hard mask layer over the main hard mask layer;
- forming a mesh-shaped hard mask pattern by performing a double patterning process on the multi-level hard mask layer;
- forming a main hard mask pattern by etching the main hard mask layer using the mesh-shaped hard mask pattern as an etch barrier;
- forming a plurality of small openings and a plurality of large openings by etching the etch target layer using the main hard mask pattern as an etch barrier;
- and
- forming a plurality of dielectric layers that fill the small openings and the large openings.
Dependencies are inferred from the claim text.