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US 12,613,463 B2Granted
Mask blank, and phase shift mask
AssigneeHoya Corporation
InventorsHitoshi Maeda, Osamu Nozawa
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Abstract
A mask blank comprises a transparent substrate and a phase shift film on the transparent substrate. The phase shift film includes a lower layer and an upper layer formed on the lower layer. The upper layer is in contact with the lower layer. The lower layer includes silicon and oxygen. The upper layer includes hafnium and oxygen. The upper layer has a thickness of 5 nm or more. The phase shift film has a thickness of 90 nm or less.
Claims20
A mask blank comprising:
- a transparent substrate;
- and
- a phase shift film on the transparent substrate, wherein
- the phase shift film includes a lower layer and an upper layer formed on the lower layer,
- the upper layer is in contact with the lower layer,
- the lower layer includes silicon and oxygen,
- the upper layer includes hafnium and oxygen,
- the upper layer has a thickness of 5 nm or more, and
- the phase shift film has a thickness of 90 nm or less.
6 more elements
A phase shift mask comprising:
- a transparent substrate;
- and
- a phase shift film formed on the transparent substrate and having a transfer pattern, wherein
- the phase shift film includes a lower layer and an upper layer formed on the lower layer,
- the upper layer is in contact with the lower layer,
- the lower layer includes silicon and oxygen,
- the upper layer includes hafnium and oxygen,
- the upper layer has a thickness of 5 nm or more, and
- the phase shift film has a thickness of 90 nm or less.
6 more elements
Dependencies are inferred from the claim text.