Methods for depositing silicon films by atomic layer deposition
AssigneeMicron Technology, Inc.
InventorsJean-Sebastien Materne Lehn, Francois H. Fabreguette, Timothy A. Quick
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Abstract
Methods, systems, and devices for methods for depositing silicon films by atomic layer deposition are described. For instance, a device may expose a base material (e.g., multiple stacks of materials) to a first precursor to form a silicon compound on the base material, the first precursor including a silicon amidinate. The device may react a second precursor with the silicon compound and may form a layer of silicon on the base material based on exposing the base material to the first precursor and reacting the second precursor with the silicon compound.
Claims21
A method, comprising:
- exposing a base material to a first precursor to form a silicon compound on the base material, wherein the first precursor comprises a silicon amidinate;
- reacting a second precursor with the silicon compound;
- and
- forming a layer of silicon on the base material based at least in part on exposing the base material to the first precursor and reacting the second precursor with the silicon compound.
A method, comprising:
- forming a plurality of stacks of materials on a substrate;
- exposing the plurality of stacks of materials to a first precursor to form a silicon compound on the plurality of stacks of materials, wherein the first precursor comprises a silicon amidinate;
- exposing the plurality of stacks of materials to a second precursor;
- and
- forming a layer of silicon on the plurality of stacks of materials based at least in part on exposing the plurality of stacks of materials to the first precursor and reacting the second precursor with the silicon compound.
An apparatus, comprising:
- a plurality of stacks of materials on a substrate, at least one material of the plurality of stacks of materials comprising a memory material;
- and
- a layer of silicon on the plurality of stacks of materials formed by exposing the plurality of stacks of materials to a first precursor comprising a silicon amidinate and by exposing the plurality of stacks of materials to a second precursor.
Dependencies are inferred from the claim text.