Power semiconductor package

A power semiconductor package which defines a half-bridge electrical circuit comprising a high-side power switch and a low-side power switch, the power semiconductor package comprising:

• a first substrate assembly which comprises at least one power semiconductor die which defines the high-side power switch;
• a second substrate assembly which is arranged substantially parallel to the first substrate assembly and which comprises at least one power semiconductor die which defines the low-side power switch;
• and
• a power terminal assembly which comprises,
• a power terminal substrate which is arranged between the first substrate assembly and the second substrate assembly,
• a high-side drain power terminal which is electrically connected to an electrical drain circuit of the high-side power switch,
• a low-side source power terminal which is electrically connected to an electrical source circuit of the low-side power switch, and
• a mid-point power terminal which is electrically connected to an electrical source circuit of the high-side power switch and to an electrical drain circuit of the low-side power switch,
• wherein,
• the high-side drain power terminal, the low-side source power terminal, and the mid-point power terminal are each arranged on the power terminal substrate.