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US 12,606,906 B1Granted
Diamond growth on composite substrate
OwnerJohn Michael Pinneoinventor
Life of this patent
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Abstract
A method includes inserting a composite substrate into a reactor, where the composite substrate has a transverse coefficient of thermal expansion matching the transverse coefficient of thermal expansion of diamond throughout the range of 20 to 600 deg. C.; growing a layer of diamond upon a composite substrate via microwave plasma chemical vapor deposition. The composite substrate includes a deposition layer embedded within a base layer that is at least 6,000 times thicker than the deposition layer.
Claims18
A method comprising:
- placing a composite substrate in a reactor;
- growing a layer of diamond upon a composite substrate via microwave plasma chemical vapor deposition;
- wherein the composite substrate includes an upper layer embedded within a lower layer, the lower layer being at least 4,000 times thicker than the upper layer;
- cycling the grown diamond and the composite substrate between tensile and compressive stresses at an interface between the grown diamond and the composite substrate before delaminating the grown diamond from the composite substrate;
- and
- wherein the lower layer is 6 to 17 mm thick, the upper layer is less than one micron thick, the lower layer has a coefficient of thermal expansion of less than 3.5 ppm per deg. C. at 20 deg. C. and the upper layer includes diamond.
3 more elements
A method comprising:
- inserting a composite substrate into a reactor, wherein the composite substrate has a transverse coefficient of thermal expansion matching the transverse coefficient of thermal expansion of diamond throughout the range of 20 to 600 deg. C.;
- growing a layer of diamond upon a composite substrate via microwave plasma chemical vapor deposition;
- wherein the composite substrate includes a deposition layer embedded within a base layer that is at least 6,000 times thicker than the deposition layer.
A method comprising:
- inserting a composite substrate into a reactor, wherein the composite substrate has a transverse coefficient of thermal expansion matching the transverse coefficient of thermal expansion of diamond throughout the range of 20 to 600 deg. C.;
- growing a layer of diamond upon a composite substrate via microwave plasma chemical vapor deposition;
- and
- cycling the grown diamond and the composite substrate between tensile and compressive stresses at an interface between the grown diamond and the composite substrate.
1 more element
Dependencies are inferred from the claim text.