Package structure and manufacturing method thereof

A package structure, comprising:

• a redistribution layer;
• a conductive pillar and an active chip disposed side by side on the redistribution layer, wherein the active chip comprises a pad;
• an encapsulation layer surrounding the active chip and the conductive pillar, wherein the encapsulation layer has a first through hole and a second through hole, the first through hole is disposed between the pad of the active chip and the redistribution layer, the second through hole is disposed between the conductive pillar and the redistribution layer, and a depth of the first through hole is less than a depth of the second through hole;
• another redistribution layer disposed on a side of the active chip away from the redistribution layer and electrically connected to the redistribution layer through the conductive pillar, wherein a number of dielectric layers of the another redistribution layer is less than a number of dielectric layers of the redistribution layer;
• and
• an anti-warping layer disposed on a side of the another redistribution layer away from the active chip, wherein a thickness of the anti-warping layer is at least twice a thickness of one of the dielectric layers of the another redistribution layer, a Young's modulus of the anti-warping layer is greater than a Young's modulus of polyimide, and the anti-warping layer comprises siloxane polymer, dry film type solder resist material or Ajinomoto laminated film.