Semiconductor device including a hybrid bonding structure

A semiconductor device, comprising:

• a substrate;
• a first device structure layer disposed on the substrate;
• an interconnect structure layer disposed on the first device structure layer, and electrically connected to the first device structure layer, wherein the interconnect structure layer comprises a plurality of first pads located at a surface of the interconnect structure layer;
• a second device structure layer disposed on the interconnect structure layer, wherein the second device structure layer comprises a plurality of second pads located at a surface of the second device structure layer;
• a pattern structure, disposed at a first interface between the interconnect structure layer and the second device structure layer;
• a first seal ring, disposed at the surface of the interconnect structure layer and surrounding the pattern structure;
• and
• a second seal ring, disposed at the surface of the second device structure layer and surrounding the pattern structure,
• wherein each of the first pads is connected to a corresponding second pad of the plurality of second pads, and the first seal ring is connected to the second seal ring.