Method for producing a plurality of components, component, and component assembly

A component assembly comprising of a plurality of components, a modified sacrificial layer and a common intermediate carrier, wherein

• the components each comprise a semiconductor body having an active zone, the semiconductor bodies being disposed on the common intermediate carrier and being laterally spaced from each other by separation trenches,
• the sacrificial layer is arranged in a vertical direction between the common intermediate carrier and the semiconductor bodies, the sacrificial layer having a plurality of retaining elements between the semiconductor bodies and the common intermediate carrier, and the semiconductor bodies being mechanically connected to the common intermediate carrier exclusively via the retaining elements,
• the retaining elements are surrounded by cavities in lateral directions, and
• the semiconductor bodies are formed to be detachable from the common intermediate carrier, wherein the retaining elements are configured to release the semiconductor bodies from the common intermediate carrier under mechanical load or by irradiation or by etching,
• wherein the semiconductor bodies are based on GaAs or on GaP and the sacrificial layer is an aluminum-containing GaAs or GaP layer.

A component assembly comprising of a plurality of components, a modified sacrificial layer and a common intermediate carrier, wherein

• the components each comprise a semiconductor body having an active zone, the semiconductor bodies being disposed on the common intermediate carrier and being laterally spaced from each other by separation trenches,
• the sacrificial layer is arranged in a vertical direction between the common intermediate carrier and the semiconductor bodies, the sacrificial layer having a plurality of retaining elements between the semiconductor bodies and the common intermediate carrier, and the semiconductor bodies being mechanically connected to the common intermediate carrier exclusively via the retaining elements,
• the retaining elements are surrounded by cavities in lateral directions, and
• the semiconductor bodies are formed to be detachable from the common intermediate carrier, wherein the retaining elements are configured to release the semiconductor bodies from the common intermediate carrier under mechanical load or by irradiation or by etching,
• wherein at least one of the retaining elements is arranged both below the semiconductor bodies and laterally of the semiconductor bodies in the separation trenches, wherein the at least one retaining element is assigned to a plurality of semiconductor bodies at the same time and thus is simultaneously covered by a plurality of semiconductor bodies.