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US 12,604,745 B2Granted
Switching power device and parallel connection structure thereof
AssigneeFormitek Electric (Zhoushan) Co., Ltd.
InventorsYue Fu, Lingtao Kong
Life of this patent
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Abstract
A switching power device comprises a device lead-frame. Gates, Kelvin sources and a drain are formed on the device lead-frame, the gates and the Kelvin sources are arranged at one end of the device lead-frame, and the drain is arranged at the other end of the device lead-frame; and two gates and two Kelvin sources are provided. One end of the device lead-frame is sequentially provided with the gate, the Kelvin source, the Kelvin source and the gate, so as to form a symmetrical pin structure.
Claims16
A switching power device, comprising:
- a device lead-frame, on which gates, Kelvin sources and a drain are formed;
- wherein the gates and the Kelvin sources are arranged at one end of the device lead-frame, and the drain is arranged at another end of the device lead-frame;
- wherein two gates and two Kelvin sources are provided, and one end of the device lead-frame is sequentially provided with the gate, the Kelvin source, the Kelvin source and the gate, so as to form a symmetrical pin structure;
- wherein the switching power device comprises a power semiconductor die arranged on the device lead-frame, wherein the power semiconductor die is provided with die gate wire-bonding pads, a die source wire-bonding pad and a die drain wire-bonding pad, and wherein the gates are connected to the die gate wire-bonding pads, the Kelvin sources are connected to the die source wire-bonding pad, and the drain is connected to the die drain wire-bonding pad;
- and
- wherein two die gate wire-bonding pads are provided, and each die gate wire-bonding pad is connected to one gate.
3 more elements
A parallel connection structure of switching power devices, comprising:
- a driving IC chip and two of switching power devices;
- wherein each switching power device of the switching power devices, comprise a device lead-frame;
- wherein gates, Kelvin sources and a drain are formed on the device lead-frame, the gates and the Kelvin sources are arranged at one end of the device lead-frame, and the drain is arranged at another end of the device lead-frame;
- wherein two gates and two Kelvin sources are provided, and one end of the device lead-frame is sequentially provided with the gate, the Kelvin source, the Kelvin source and the gate, so as to form a symmetrical pin structure;
- wherein the two switching power devices are connected in parallel, and an output end of the driving IC chip is connected to gates and Kelvin sources of the switching power devices to form a driving circuit;
- wherein the switching power device comprises a power semiconductor die arranged on the device lead-frame, wherein the power semiconductor die is provided with die gate wire-bonding pads, a die source wire-bonding pad and a die drain wire-bonding pad, and wherein the gates are connected to the die gate wire-bonding pads, the Kelvin sources are connected to the die source wire-bonding pad, and the drain is connected to the die drain wire-bonding pad;
- and
- wherein two die gate wire-bonding pads are provided, and each die gate wire-bonding pad is connected to one gate.
5 more elements
Dependencies are inferred from the claim text.