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US 12,604,725 B2Granted
Interlevel dielectric structure in semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Cheng Chou, Chung-Chi Ko, Tze-Liang Lee, Ming-Tsung Lee
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Abstract
A semiconductor device including a substrate, a low-k dielectric layer, a cap layer, and a conductive layer is provided. The low-k dielectric layer is disposed over the substrate. The cap layer is disposed on the low-k dielectric layer, wherein a carbon atom content of the cap layer is greater than a carbon atom content of the low-k dielectric layer. The conductive layer is disposed in the cap layer and the low-k dielectric layer.
Claims20
A semiconductor device, comprising:
- an etch stop layer disposed over a substrate, wherein the etch stop layer is a four-layer structure comprising, from bottom to top, AlOxNy, SiCO, AlOx and SiCO;
- a low-k dielectric layer disposed over the etch stop layer;
- a cap layer disposed on the low-k dielectric layer, wherein a carbon atom content of the cap layer is greater than a carbon atom content of the low-k dielectric layer;
- and
- a conductive feature penetrating through the cap layer, the low-k dielectric layer and the etch stop layer,
- wherein the carbon atom content of the cap layer is decreased in a direction away from the substrate.
3 more elements
A semiconductor device, comprising:
- a four-layer etch stop structure disposed over a substrate;
- a low-k dielectric layer disposed over the four-layer etch stop structure;
- a cap layer disposed on the low-k dielectric layer, wherein a carbon atom content of the cap layer ranges from 20 at % to 35 at %;
- and
- a conductive feature penetrating through the cap layer, the low-k dielectric layer and the four-layer etch stop structure, wherein the four-layer etch stop structure is located around a lower sidewall of the conductive feature,
- wherein the carbon atom content of the cap layer is decreased in a direction away from the substrate, and the carbon atom content of the cap layer is greater than a carbon atom content of the low-k dielectric layer.
3 more elements
A semiconductor device, comprising:
- a four-layer etch stop structure disposed over a substrate;
- a dielectric layer disposed over the four-layer etch stop structure;
- a conductive feature penetrating through the dielectric layer and the four-layer etch stop structure, wherein the conductive feature has a lower portion and an upper portion wider than the lower portion, and the entire four-layer etch stop structure is located around a lower sidewall of the lower portion;
- and
- a cap layer disposed on the dielectric layer, wherein a carbon atom content of the cap layer is decreased in a direction away from the substrate, and the carbon atom content of the cap layer is greater than a carbon atom content of the dielectric layer.
2 more elements
Dependencies are inferred from the claim text.