Vertical semiconductor device

A vertical semiconductor device, comprising:

• lower circuit patterns disposed on a first substrate;
• a bonding layer disposed on the lower circuit patterns;
• a wire disposed on the bonding layer;
• pattern structures disposed on the wire, each of the pattern structures including insulating patterns and gate electrodes, which are alternately stacked on a top surface of the first substrate in a vertical direction, the pattern structures having an edge region having a step shape in which a length gradually increases from a bottom to a top, and extending in a first direction that is parallel to the top surface of the first substrate;
• a base pattern disposed on the pattern structure;
• an upper insulating layer on the base pattern;
• a channel structure disposed inside a channel hole formed through the pattern structure, and extending to the base pattern;
• a cell contact plug disposed inside a cell contact hole formed through a step-shaped region of the pattern structure, extending to the upper insulating layer, and electrically connected to one gate electrode in the pattern structure;
• a through-plug disposed inside a through-hole formed through an outer side of the base pattern to extend to the upper insulating layer;
• and
• a plate contact plug disposed inside a plate contact hole formed through an outer side of the pattern structure, and electrically connected to the base pattern,
• wherein bottom surfaces of the cell contact plug, the through-plug, and the plate contact plug are disposed on a same plane.

A vertical semiconductor device, comprising:

• lower circuit patterns disposed on a first substrate;
• a bonding layer disposed on the lower circuit patterns;
• a wire disposed on the bonding layer;
• a cell stack structure disposed on the wire;
• a base pattern disposed on the cell stack structure;
• an upper insulating layer disposed on the base pattern;
• a cell contact plug passing through the cell stack structure and extending to the upper insulating layer;
• and
• a through-plug disposed inside a through-hole formed through an outer side of the base pattern to extend to the upper insulating layer,
• wherein each of the cell contact plug and the through-plug includes a barrier metal pattern and a metal pattern, and
• wherein the barrier metal pattern is disposed along sidewalls and bottom surfaces of the cell contact hole and the through-hole.