Semiconductor device having a through-via structure electrically connected to a contact structure

A semiconductor device, comprising:

• a device substrate structure including a first semiconductor substrate having a first surface and a second surface opposite to each other and an active pattern protruding from the first surface and extending in a first direction, an interlayer insulating layer on the active pattern, a through-via structure electrically connected to the active pattern and passing through the interlayer insulating layer and the first semiconductor substrate, and a first wiring portion on the interlayer insulating layer;
• a first bonding structure including a first insulating layer on the second surface of the first semiconductor substrate and a first connection pad embedded in the first insulating layer and connected to the through-via structure;
• a second bonding structure on the first bonding structure and including a second insulating layer bonded to the first insulating layer and a second connection pad embedded in the second insulating layer and bonded to the first connection pad;
• a power supply substrate structure including a second wiring portion on the second bonding structure and a second semiconductor substrate having a through-via connected to the second wiring portion;
• and
• a support substrate on the first wiring portion.

A semiconductor device, comprising:

• a first semiconductor substrate having a first surface and a second surface opposite to each other;
• an active pattern protruding from the first surface of the first semiconductor substrate, the active pattern extending lengthwise in a first direction;
• a gate structure in a region of the active pattern, the gate structure extending lengthwise in a second direction intersecting the first direction;
• a source/drain region on the active pattern on a side of the gate structure;
• an interlayer insulating layer on the source/drain region;
• a contact structure extending through the interlayer insulating layer to connect to the source/drain region;
• a through-via structure electrically connected to the contact structure;
• a first bonding structure including a first insulating layer on the second surface of the first semiconductor substrate and a first connection pad embedded in the first insulating layer, the first connection pad being connected to the through-via structure;
• a second bonding structure on the first bonding structure and including a second insulating layer bonded to the first insulating layer and a second connection pad embedded in the second insulating layer and bonded to the first connection pad;
• and
• a second semiconductor substrate on the second bonding structure,
• wherein the through-via structure extends from the first bonding structure through at least a portion of the interlayer insulating layer, and
• wherein an upper surface of the through-via structure is farther from the first surface of the first semiconductor substrate than an upper surface of the active pattern.