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US 12,604,718 B2Granted
Memory device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsDae Hyun Kim, Sei Yon Kim
Life of this patent
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Abstract
Provided herein may be a memory device and a method of manufacturing the same. The memory device may include a plurality of insulating layers and a plurality of gate lines configured to be alternately stacked, and a cell plug configured to pass through the plurality of insulating layers and the plurality of gate lines, wherein the plurality of gate lines, each made of a conductive material, are etched together with the plurality of insulating layers, and the cell plug includes a blocking layer, a charge trap layer, a tunnel insulating layer, a channel layer, and a core pillar.
Claims6
A memory device, comprising:
- a plurality of insulating layers and a plurality of gate lines configured to be alternately stacked;
- and
- a cell plug configured to pass through the plurality of insulating layers and the plurality of gate lines,
- wherein the plurality of gate lines includes a conductive material,
- wherein the plurality of gate lines and the plurality of insulating layers have similar etch selectivity under the same etching gas,
- wherein the cell plug comprises a blocking layer, a charge trap layer, a tunnel insulating layer, a channel layer, and a core pillar, and
- wherein each of the plurality of gate lines is formed of a plurality of different conductive oxide layers.
4 more elements
Dependencies are inferred from the claim text.