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US 12,604,694 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeNanya Technology Corporation
InventorSzu Yu Hou
Life of this patent
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Abstract
A semiconductor device includes a substrate and a bit line structure disposed on the substrate. The bit line structure includes a first conductive structure and a second conductive structure, in which a material of the first conductive structure includes polysilicon. The second conductive structure is disposed in direct contact on the first conductive structure, in which a reactivity of a material of the second conductive structure to oxygen is larger than a reactivity of tungsten to oxygen.
Claims15
A semiconductor device, comprising:
- a substrate;
- and
- a bit line structure disposed on the substrate and comprising:
- a first conductive structure, wherein a material of the first conductive structure comprises polysilicon;
- and
- a second conductive structure disposed in direct contact on the first conductive structure, wherein a reactivity of a material of the second conductive structure to oxygen is larger than a reactivity of tungsten to oxygen.
3 more elements
A manufacturing method of a semiconductor device, comprising:
- disposing a first conductive layer on a substrate;
- disposing a second conductive layer on the first conductive layer;
- patterning the first conductive layer and the second conductive layer to form a first conductive structure and a second conductive structure by a dry etching, wherein a residue is formed on the second conductive structure;
- and
- performing an ashing process to remove the residue, wherein a gas for generating a plasma used in the ashing process is an oxygen-free gas comprising a hydrogen-containing gas and a nitrogen-containing gas, a hydrogen-containing and nitrogen-containing gas, or a combination thereof.
2 more elements
Dependencies are inferred from the claim text.