Process for manufacturing electroacoustic modules

A method, comprising:

• forming a plurality of unit portions of an assembly including:
• coupling a plurality of die to a redistribution structure;
• forming a coating region on the redistribution structure and enclosing the plurality of die;
• and
• forming a connection region extending through the coating region to the redistribution structure;
• forming a wafer including:
• forming a multilayer structure on a surface of a semiconductor body;
• forming a plurality of actuators on the multilayer structure;
• forming a plurality of drive pads on the multilayer structure;
• forming a plurality of connection elements on the plurality of drive pads;
• forming a plurality of first recesses extending through the multilayer structure and extending into a first surface of the semiconductor body;
• and
• forming a plurality of second recesses extending into a second surface of the semiconductor body opposite to the first surface and extending to the multilayer structure;
• forming a plurality of transduction structures by singulating the wafer;
• coupling the plurality of transduction structures to the assembly by coupling the plurality of connection elements of the plurality of transduction structures to the redistribution structure;
• forming a bonding region between adjacent ones of the plurality of transduction structures;
• and
• forming a plurality of die assemblies by singulating the bonding region and the assembly.

A method, comprising:

• forming a plurality of unit portions of an assembly including:
• coupling a plurality of die to a redistribution structure;
• forming a coating region on the redistribution structure and enclosing the plurality of die;
• and
• forming a connection region extending through the coating region to the redistribution structure;
• forming a wafer including:
• forming a plurality of actuators;
• forming a plurality of drive pads;
• forming a plurality of connection elements on the plurality of drive pads;
• forming a plurality of recesses extending into a first surface of a semiconductor body;
• and
• forming a plurality of second recesses extending into a second surface of the semiconductor body opposite to the first surface;
• forming a pair of transduction structures by singulating the wafer;
• coupling the pair of transduction structures to the assembly including coupling a plurality of connection elements of a first transduction structure of the pair of transduction structures to the redistribution structure, coupling a plurality of connection elements of a second transduction structure of the pair of transduction structures, and defining a gap between the first transduction structure of the pair of transduction structures and the second transduction structure of the pair of transduction structures;
• and
• forming a bonding region between the first transduction structure and the second transduction structure, the bonding region extends from the first transduction structure to the second transduction structure, the bonding region extends from the first transduction structure to the redistribution structure, and the bonding region extends from the second transduction structure to the redistribution structure.