Methods for wet atomic layer etching of molybdenum in aqueous solution
AssigneeTokyo Electron Limited
InventorTulashi Dahal
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorTulashi Dahal
Estimating the term…
Methods are provided for etching molybdenum in a wet ALE process. The methods disclosed herein use a wide variety of techniques and wet etch chemistries to oxidize a molybdenum surface and form a self-limiting, molybdenum oxide passivation layer in a surface modification step of the wet ALE process. In the wet ALE processes and methods disclosed herein, self-limiting behavior is provided in the oxidation step by adding a polydentate ligand to an aqueous oxidizing solution. The polydentate ligand reacts with and binds to the oxidized molybdenum surface to form a stable, ligand-molybdenum oxide complex, which is insoluble within the aqueous oxidizing solution. The insolubility of the ligand-molybdenum complex in the aqueous oxidizing solution provides self-limiting behavior in the oxidation step. After forming the molybdenum oxide passivation layer, the passivation layer is selectively removed in a dissolution step of the wet ALE process to etch the molybdenum surface.
A method of etching, the method comprising:
A method of etching a substrate using a wet atomic layer etching (ALE) process, the method comprising:
Dependencies are inferred from the claim text.