Bracing structure, semiconductor device with the same, and method for fabricating the same

A method for fabricating a semiconductor device, comprising:

• providing a substrate, forming a dielectric stack over the substrate with a top supporting layer atop, and forming a plurality of cell holes in the dielectric stack;
• forming at least two adjacent bottom electrodes in the plurality of cell holes, wherein the at least two adjacent bottom electrodes respectively comprises a bottom portion oriented parallel to the substrate and a sidewall portion extending normally and upwardly from a border of the bottom portion;
• forming an under layer over the top supporting layer, and forming an under-layer opening penetrating the under layer to partially expose the at least two adjacent bottom electrodes and the top supporting layer;
• recessing the top supporting layer to form a recessed portion of the top supporting layer that partially exposes outer surfaces of the sidewall portions of the at least two adjacent bottom electrodes;
• conformally forming a first portion of a protection layer on a sidewall of the recessed portion and a second portion of the protection layer on the outer surfaces of the sidewall portions;
• and
• recessing the sidewall portions to form a first bracing layer and a second bracing layer, wherein the first bracing layer is formed on both the first portion and top surfaces of the sidewall portions, and the second bracing layer is formed on the second portion;
• wherein the first bracing layer, the second bracing layer, and the protection layer together configure a support bracing structure.