Semiconductor device and methods of manufacturing

A device, comprising:

• a metal structure,
• wherein a first dielectric layer comprising a convex-shaped upper surface and an approximately flat lower surface that overlaps an edge region of the metal structure;
• and
• a cell structure comprising an electrode structure on the metal structure, and
• wherein a second dielectric layer, that surrounds the metal structure, is included between the cell structure and the convex-shaped upper surface of the first dielectric layer.

A method, comprising:

• forming a dielectric layer on a metal structure;
• removing portions of the dielectric layer to expose a landing region on a top surface of the metal structure,
• wherein removing the portions of the dielectric layer forms convex-shaped surfaces in the dielectric layer that are adjacent to the landing region, and
• wherein the convex-shaped surfaces overlap edges of the metal structure;
• forming one or more layers of a cell structure over the metal structure and the dielectric layer,
• wherein a bottom layer of the one or more layers is on the landing region and the dielectric layer;
• and
• removing portions of the one or more layers to form the cell structure,
• wherein removing the portions of the dielectric layer to expose the landing region on the top surface of the metal structure comprises:
• removing the portions of the dielectric layer to form the landing region to a first width, and
• wherein removing the portions of the one or more layers to form the cell structure comprises:
• removing the portions to form the cell structure to a second width that is lesser relative to the first width.

A method, comprising:

• forming a dielectric layer on a metal structure;
• removing portions of the dielectric layer to expose a landing region on a top surface of the metal structure,
• wherein removing the portions of the dielectric layer forms convex-shaped surfaces in the dielectric layer that are adjacent to the landing region, and
• wherein the convex-shaped surfaces overlap edges of the metal structure;
• forming one or more layers of a cell structure over the metal structure and the dielectric layer,
• wherein a bottom layer of the one or more layers is on the landing region and the dielectric layer;
• and
• removing portions of the one or more layers to form the cell structure,
• wherein the metal structure performs as an etch stop during the removing of the portions of the one or more layers to form the cell structure.