Magnetic tunnel junction structure for MRAM

A magnetoresistive random access memory (MRAM) structure comprising:

• an interconnect;
• and
• a multilayered magnetic tunnel junction (MTJ) pillar disposed on the interconnect and having an outermost sidewall contacting multiple layers in the MTJ pillar, the MTJ pillar comprising an electrode layer electrically connecting the MTJ pillar to the interconnect, the electrode layer comprising an insulative material at an outermost portion of the electrode layer and a conductive material at a first inner portion of the electrode layer disposed radially inward from the outermost sidewall and the outermost portion of the electrode layer, wherein the insulative material directly contacts the outermost portion of the electrode layer and the outermost sidewall.