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US 12,604,669 B2Granted
Spin-orbit torque memory devices
AssigneeInternational Business Machines Corporation
InventorsChing-Tzu Chen, Henry K. Utomo
Life of this patent
Estimating the term…
Abstract
Spin-orbit torque magnetoresistive random access memory (SOT MRAM) devices are provided. Each of the SOT MRAM devices integrates a SOT layer and an interconnect layer at a same metal level using a topological conductor (i.e., a topological metal or a topological semimetal) as both the interconnect layer and the SOT layer. The SOT MRAM devices further include a magnetic tunnel junction (MTJ) structure contacting the SOT layer, and a contact structure contacting the MTJ structure.
Claims20
A memory structure comprising:
- a spin-orbit torque (SOT) layer and an interconnect layer located at a same metal level of a back-end-of-the-line (BEOL) structure, wherein both the spin-orbit torque (SOT) layer and the interconnect layer are composed of a topological conductor;
- a magnetic tunnel junction (MTJ) structure having a magnetic free layer forming an interface with the SOT layer;
- a MTJ contact structure contacting the MTJ structure;
- and
- an encapsulation liner located along a sidewall of the MTJ structure and a sidewall of the MTJ contact structure, and in direct contact with both the SOT layer and the interconnect layer.
2 more elements
A memory structure comprising:
- a spin-orbit torque (SOT) layer and an interconnect layer located at a same metal level of a back-end-of-the-line (BEOL) structure, wherein both the SOT layer and the interconnect layer are composed of a topological conductor, wherein the SOT layer further comprises at least one via portion that is located on a side of the SOT layer that is opposite the side of the SOT layer that contacts the MTJ structure, the SOT layer and the at least one via portion are both composed of the topological conductor;
- a magnetic tunnel junction (MTJ) structure having a magnetic free layer forming an interface with the SOT layer;
- and
- a MTJ contact structure contacting the MTJ structure.
1 more element
A structure comprising:
- a memory device region comprising a memory structure located therein, the memory structure comprises a spin-orbit torque (SOT) layer and an interconnect layer located at a same metal level of a back-end-of-the-line (BEOL) structure, wherein both the spin-orbit torque (SOT) layer and the interconnect layer are composed of a topological conductor, a magnetic tunnel junction (MTJ) structure having a magnetic free layer forming an interface with the SOT layer, and a MTJ contact structure contacting the MTJ structure;
- and
- a non-memory device region located adjacent to the memory device region, the non-memory device region comprises another interconnect layer, wherein the another interconnect layer is located at the same metal level as both the SOT layer and the interconnect layer, and the another interconnect layer is composed of the topological conductor.
Dependencies are inferred from the claim text.