LED structure, LED device and method of manufacturing LED structure

A manufacturing method for an LED structure, comprising:

• providing a substrate, the substrate comprising at least one first region and at least one second region;
• forming at least one patterned mask layer over a partial region of the at least one second region of the substrate to form a substrate structure comprising the substrate and the at least one patterned mask layer located on an upper surface of the substrate;
• and
• forming a light-emitting unit on the substrate structure through an epitaxial growth process, the light-emitting unit comprising a first sub-light-emitting structure formed over the at least one first region and a second sub-light-emitting structure formed over the at least one second region;
• wherein the light-emitting unit comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer that are stacked in sequence, wherein the first semiconductor layer, the light-emitting layer, and the second semiconductor layer each constitute a layer that continuously covers both the first region and the second region;
• wherein the at least one patterned mask layer is configured to suppress epitaxial growth of the light-emitting unit located above the at least one patterned mask layer, such that the first semiconductor layer epitaxially grown in the second region is formed as a three-dimensional epitaxial structure with inclined sidewalls, and the light-emitting layer of the second sub-light-emitting structure conformally covers the inclined sidewalls of the first semiconductor layer to form an inclined structure, so that the first sub-light-emitting structure and the second sub-light-emitting structure formed through a same process have different light-emitting wavelengths.