Display device and method for manufacturing the same

An electronic device comprising:

• a substrate;
• pixel electrodes on the substrate;
• light emitting elements on the pixel electrodes, each of the light emitting elements comprising:
• a first stack comprising a first n-type semiconductor layer and a first p-type semiconductor layer with a first active layer for emitting first light therebetween;
• a second stack below the first stack, and comprising a second n-type semiconductor layer and a second p-type semiconductor layer with a second active layer for emitting second light therebetween;
• a third stack below the second stack, and comprising a third n-type semiconductor layer and a third p-type semiconductor layer with a third active layer for emitting third light therebetween;
• tunnel function layers respectively between the first stack and the second stack, and between the second stack and the third stack;
• and
• connection electrodes connecting the pixel electrodes with the light emitting elements, the connection electrodes comprising:
• a first connection electrode connected to the first p-type semiconductor layer of the first stack;
• a second connection electrode connected to the second p-type semiconductor layer of the second stack;
• a third connection electrode connected to the third p-type semiconductor layer of the third stack;
• and
• a common connection electrode connected to the first n-type semiconductor layer of the first stack.

A display device comprising:

• a substrate;
• pixel electrodes on the substrate;
• and
• light emitting elements on the pixel electrodes, each of the light emitting elements comprising:
• a first stack for emitting first light in accordance with a first driving current;
• a second stack comprising a second active layer, for emitting second light in accordance with a second driving current;
• a third stack comprising a third active layer, for emitting third light in accordance with a third driving current;
• and
• tunnel function layers including a first tunnel function layer between the first stack and the second stack, a second tunnel function layer and between the second stack and the third stack,
• wherein an area of the first tunnel functional layer is the same as an area of the second active layer of the second stack, and an area of the second tunnel functional layer is the same as an area of the third active layer of the third stack, and the area of the first tunnel functional layer is greater than the area of the second tunnel functional layer.