Light-emitting device

Abstract

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer and a second semiconductor layer, wherein in a top view, the semiconductor stack comprises an outer peripheral region and an inner region, the outer peripheral region exposes the first semiconductor layer, and the second semiconductor layer is disposed in the inner region; an outer insulated structure comprising an insulation layer and a protective layer, the insulation layer comprising a plurality of first insulation layer outer openings and a second insulation layer opening; a first electrode covering the plurality of first insulation layer outer openings; and a second electrode covering the second insulation layer opening, wherein the outer insulated structure comprises a total thickness gradually decreasing from the outer peripheral region to the inner region.

Dependencies are inferred from the claim text.