Semiconductor structure and manufacture method therefor

A method for manufacturing a semiconductor structure, comprising:

• S1:
• forming an N-type semiconductor layer on a substrate in a vertical direction to form an intermediate semiconductor structure;
• S2:
• forming a multiple-quantum-well structure on the intermediate semiconductor structure, wherein the multiple-quantum-well structure comprises a plurality of semiconductor layers sequentially stacked and a multiple-quantum-well unit formed between each two adjacent semiconductor layers of the plurality of semiconductor layers;
• wherein for each of the plurality of semiconductor layers of the multiple-quantum-well structure, the semiconductor layer comprises a first semiconductor sub-layer and a second semiconductor sub-layer periodically stacked, and the multiple-quantum-well unit is between the first semiconductor sub-layer and the second semiconductor sub-layer;
• wherein the first semiconductor sub-layer comprises indium, and the indium in the first semiconductor sub-layer of each of the plurality of semiconductor layers of the multiple-quantum-well structure has a different molar content of indium;
• and
• S3:
• forming a P-type semiconductor layer on the multiple-quantum-well structure and on at least part of sides of the multiple-quantum-well structure, wherein the P-type semiconductor layer is in contact with each of the plurality of semiconductor layers of the multiple-quantum-well structure in the vertical direction.