Mixed color light emitting device
AssigneeSeoul Viosys Co., Ltd.
InventorChung Hoon Lee
Life of this patent
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Abstract
A light emitting device including a first semiconductor stacked structure configured to emit multi-color light, and a red light source configured to emit red light, in which the first semiconductor stacked structure includes a first conductivity-type nitride semiconductor layer, an active layer disposed on the first conductivity-type nitride semiconductor layer, and a second conductivity-type nitride semiconductor layer disposed on the active layer, the active layer has a multi-quantum well structure including a plurality of barrier layers and a plurality of well layers stacked one over another, and the active layer is configured to emit multi-color light.
Claims14
A light emitting device, comprising:
- a first semiconductor configured to emit multi-band spectral light;
- and
- a red light source configured to emit red light,
- wherein the first semiconductor comprises:
- a first conductivity-type nitride semiconductor layer;
- an active layer disposed on the first conductivity-type nitride semiconductor layer;
- and
- a second conductivity-type nitride semiconductor layer disposed on the active layer,
- wherein the active layer includes a multi-quantum well structure including a plurality of barrier layers, a plurality of well layers, and a plurality of capping layers alternately stacked one over another,
- wherein the plurality of well layers includes a first well layer and a second well layer, and the plurality of capping layers includes a first capping layer and a second capping layer,
- wherein the first capping layer is disposed on a top surface of the first well layer, and the second capping layer is disposed on a top surface of the second well layer,
- wherein an Al composition of a first portion of the plurality of capping layers is greater than an Al composition of a second portion of the plurality of capping layers,
- wherein a region of the active layer includes a V-pit structure,
- wherein the first portion of the plurality of capping layers is disposed over a flat surface of the V-pit structure,
- wherein the second portion of the plurality of capping layers is disposed in the V-pit structure, and
- wherein the active layer is configured to emit the multi-band spectral light.
Dependencies are inferred from the claim text.