Semiconductor image-sensing structure and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Hsien Yang, Chun-Liang Lu, Chun-Hao Chou, Kuo-Cheng Lee
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Abstract
A semiconductor image sensing structure includes a substrate, an isolation structure, an anti-reflection structure, at least one optical element and a transistor. The substrate has at least one photodiode region. The isolation structure is disposed in the substrate and surrounds the photodiode region. The anti-reflection structure covers the photodiode region. The optical element is disposed over the anti-reflection structure and corresponds to the photodiode region. The transistor is disposed under the photodiode region.
Claims20
A semiconductor image-sensing structure, comprising:
- a substrate having at least one photodiode region;
- an isolation structure disposed in the substrate and surrounding the at least one photodiode region;
- an anti-reflection structure covering the photodiode region;
- at least one optical element disposed over the anti-reflection structure and corresponding to the at least one photodiode region;
- a base grid disposed above a top of the isolation structure, wherein a protecting layer that is formed between the anti-reflection structure and the at least one optical element encloses the base grid;
- and
- a transistor disposed under the at least one photodiode region.
A semiconductor image-sensing structure, comprising:
- a substrate having at least one photodiode region;
- an isolation structure disposed in the substrate and surrounding the at least one photodiode region;
- at least one optical element disposed over the substrate and corresponding to the at least one photodiode region;
- a plurality of pillars disposed between the at least one photodiode region and the at least one optical element, wherein the plurality of pillars are configured to reduce a reflection of a light from the at least one optical element;
- and
- a base grid disposed over the anti-reflection structure, wherein a protecting layer is formed between the at least one optical element and the plurality of pillars, and the protecting layer covers a top surface and sidewalls of the base grid.
A method of manufacturing a semiconductor image-sensing structure, comprising:
- patterning a surface of a substrate to form a plurality of pillars;
- forming an isolation structure in the substrate, wherein the isolation structure surrounds at least one photodiode region in the substrate, and the plurality of pillars are disposed over the at least one photodiode region;
- forming a base grid disposed above a top of the isolation structure;
- forming a protecting layer above the plurality of pillars and atop the base grid to cover the base grid;
- and
- forming at least one optical element on the protecting layer, wherein the at least one optical element is positioned over the plurality of pillars and corresponding to the at least one photodiode region.
Dependencies are inferred from the claim text.