Depth sensor

A depth sensor, comprising:

• a substrate;
• and
• a plurality of pixels disposed on the substrate,
• wherein each of the plurality of pixels includes:
• a photoelectric conversion element;
• a first photo transistor connected to the photoelectric conversion element by a first photo gate signal;
• a second photo transistor connected to the photoelectric conversion element by a second photo gate signal;
• a first floating diffusion area;
• a second floating diffusion area;
• a first storage transistor that connects the first photo transistor and the first floating diffusion area to each other;
• and
• a second storage transistor that connects the second photo transistor and the second floating diffusion area to each other,
• wherein the second photo gate signal has a phase that differs from a phase of the first photo gate signal,
• wherein each of the first and second storage transistors includes a storage gate electrode, wherein the storage gate electrode includes a first extension and a second extension that are disposed in the substrate and that are spaced apart from each other.

A depth sensor, comprising:

• a substrate that includes a first face and a second face that are opposite to each other in a first direction;
• and
• a plurality of pixels disposed on the substrate,
• wherein each of the plurality of pixels includes:
• a photoelectric conversion element disposed in the substrate;
• and
• first and second taps that share the photoelectric conversion element,
• wherein each of the first and second taps includes:
• a floating diffusion area disposed in the substrate;
• a transfer transistor connected to the floating diffusion area;
• a photo transistor connected to the photoelectric conversion element;
• a tap transfer transistor connected to the photo transistor;
• a storage transistor connected to the tap transfer transistor and the transfer transistor;
• and
• a barrier area disposed in the substrate and that overlaps the storage transistor in the first direction,
• wherein a first photo gate signal applied to the photo transistor of the first tap and a second photo gate signal applied to the photo transistor of the second tap have phases that differ from each other,
• wherein the storage transistor includes a storage gate electrode that includes a first extension and a second extension, wherein the first extension and the second extension extend from the first face of the substrate toward the second face thereof and are spaced apart from each other in a second direction that differs from the first direction.