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US 12,604,537 B2Granted
High mobility transistor element resulting from IGTO oxide semiconductor crystallization, and production method for same
AssigneeIucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
InventorsJae Kyeong Jeong, Bo Kyoung Kim, Nuri On
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Abstract
Various embodiments pertain to a high mobility transistor element resulting from IGTO oxide semiconductor crystallization, and a production method for same, the transistor element comprising a substrate and a crystalline IGTO channel layer disposed on the substrate, and being produced by converting a non-crystalline IGTO channel layer provided on the substrate to a crystalline IGTO channel layer.
Claims15
A manufacturing method of a transistor element, the method comprising:
- providing an amorphous indium gallium tin oxide (IGTO) channel layer on a substrate;
- and
- converting the amorphous IGTO channel layer to a crystalline IGTO channel layer through heat treatment.
A transistor element comprising:
- a substrate;
- and
- a crystalline indium gallium tin oxide (IGTO) channel layer provided on the substrate,
- wherein the crystalline IGTO channel layer is converted from an amorphous IGTO channel layer that is provided on the substrate through heat treatment.
1 more element
Dependencies are inferred from the claim text.