US 12,604,536 B2 · Semiconductor device and method for manufacturing semiconductor device

Abstract

A method for manufacturing a semiconductor device with a high yield is provided. In a semiconductor device including an oxide semiconductor over a substrate, when an insulator in contact with the oxide semiconductor, such as a gate insulator or an interlayer film, is deposited, the insulator can be deposited without diffusion of hydrogen into the oxide semiconductor by setting a constant derived from deposition conditions within a given range. Specifically, setting values of deposition power, the effective electrode area, deposition pressure, and the flow rate of a deposition gas containing hydrogen in the deposition conditions can be selected as appropriate.

Claims18

Dependent claims

A method for manufacturing a semiconductor device, comprising:

forming an oxide semiconductor over a substrate;
forming a conductor over and in contact with the oxide semiconductor;
removing part of the conductor and part of the oxide semiconductor, thereby forming an island-shaped conductor and an island-shaped oxide semiconductor, and
forming an insulator over the island-shaped conductor by a chemical vapor deposition method under conditions satisfying a relation of Formula (1) below,
[
Formula
⁢
1
]

0
<
(
PW
[
W
]
/
S
[
cm
2
]
)
×
P
[
P
⁢
a
]
f
[
sccm
]
≤
8
(
1
)
wherein PW [W] represents a deposition power, S [cm2] represents an effective electrode area, P [Pa] represents a deposition pressure, and f [sccm] represents a flow rate of a silane-based deposition gas,
wherein PW [W] is 85 or less, and
wherein P [Pa] is 100 or less.

40 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method for manufacturing semiconductor device

Life of this patent

Semiconductor device and method for manufacturing semiconductor device

Life of this patent

Abstract

Claims18