Semiconductor device

A semiconductor device comprising:

• a substrate including an active region having an active cell region and a termination region surrounding the active region;
• a gate signal region included in the active area and non-overlapped with the active cell region;
• a gate electrode disposed in the active cell region of the substrate;
• a gate bus disposed in the gate signal region of the substrate and configured to transmit a gate signal to the gate electrode;
• a gate insulating layer disposed between the gate electrode and the substrate and between the gate bus and the substrate to be in direct contact with the gate bus and the gate electrode;
• a gate metal disposed on the gate bus to be connected to the gate bus;
• and
• a source metal disposed on the gate electrode to be connected to the source region.

A semiconductor device comprising:

• a substrate including an active region having an active cell region and a termination region surrounding the active region;
• a gate signal region included in the active area and non-overlapped with the active cell region;
• a gate bus disposed in the gate signal region of the substrate;
• a gate electrode extending from the gate bus and disposed in the active cell region;
• a gate insulating layer disposed in the gate signal region, the active cell region, and the termination region of the substrate;
• a first insulating layer disposed on the gate electrode;
• and
• a second insulating layer disposed on the gate bus,
• wherein a portion of the first insulating layer is disposed in the termination region to be in direct contact with a portion of the gate insulating layer disposed in the termination region, and
• a portion of the second insulating layer is disposed in the termination region to be in direct contact with a portion of the first insulating layer.