Semiconductor device with active portions of varied widths inside active pattern

A semiconductor device, comprising:

• a substrate that includes a first active pattern and a second active pattern;
• and
• a first separation structure and a second separation structure on the first active pattern and the second active pattern,
• wherein the first active pattern includes:
• a first intervening portion that overlaps the first separation structure;
• a second intervening portion that overlaps the second separation structure;
• a first active portion connected to the first intervening portion;
• a second active portion connected to the first intervening portion and the second intervening portion;
• and
• a third active portion connected to the second intervening portion,
• wherein a first width of the first active portion is different from a second width of the second active portion,
• wherein a third width of the third active portion is different from the second width,
• wherein each of the first, second, and third active portions has a first sidewall that faces the second active pattern, and
• wherein a first distance between the first sidewall of the first active portion and the first sidewall of the second active portion is a same as a second distance between the first sidewall of the second active portion and the first sidewall of the third active portion.

A semiconductor device, comprising:

• a substrate that includes a first active pattern;
• a first source/drain pattern, a second source/drain pattern, a third source/drain pattern, and a dummy source/drain pattern that are on the first active pattern;
• a first separation structure between the first source/drain pattern and the second source/drain pattern;
• a second separation structure between the second source/drain pattern and the third source/drain pattern;
• and
• a third separation structure between the third source/drain pattern and the dummy source/drain pattern,
• wherein the first active pattern includes:
• a first active portion that overlaps the first source/drain pattern;
• a second active portion that overlaps the second source/drain pattern;
• a third active portion that overlaps the third source/drain pattern;
• a dummy portion that overlaps the dummy source/drain pattern;
• a first intervening portion between the first active portion and the second active portion;
• a second intervening portion between the second active portion and the third active portion;
• and
• a third intervening portion between the third active portion and the dummy portion,
• wherein the first intervening portion overlaps the first separation structure,
• wherein the second intervening portion overlaps the second separation structure,
• wherein the third intervening portion overlaps the third separation structure,
• wherein each of the first active portion, the second active portion, the third active portion, and the dummy portion has a first sidewall and a second sidewall that are disposed symmetrically with respect to a central line of the first active pattern, and
• wherein each of (i) a first distance between the first sidewall of the first active portion and the first sidewall of the second active portion and (ii) a second distance between the first sidewall of the second active portion and the first sidewall of the third active portion is less than a third distance between the first sidewall of the third active portion and the first sidewall of the dummy portion.