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US 12,604,510 B2Granted
Contact jumper for non-self aligned contact devices
AssigneeInternational Business Machines Corporation
InventorsRuilong Xie, Julien Frougier, Min Gyu Sung, Heng Wu
Life of this patent
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Abstract
A semiconductor structure includes a first source/drain contact disposed between a first gate structure and a second gate structure, a dielectric cap disposed on the first source/drain contact, and a first gate contact disposed over the dielectric cap. The first gate contact connects the first gate structure with the second gate structure.
Claims20
A semiconductor structure, comprising:
- a first source/drain contact disposed between a first gate structure and a second gate structure;
- a dielectric cap disposed on the first source/drain contact;
- a first gate contact disposed over the dielectric cap, the first gate contact connecting the first gate structure with the second gate structure;
- a third gate structure adjacent the first gate structure;
- a second gate contact disposed on the third gate structure;
- a first source/drain region disposed between the first gate structure and the second gate structure;
- a second source/drain region disposed between the first gate structure and the third gate structure;
- and
- a second source/drain contact disposed on the second source/drain region,
- wherein the first source/drain contact is disposed on the first source/drain region;
- and
- wherein the second gate contact is separated from the first gate contact by a dielectric layer.
9 more elements
A semiconductor structure, comprising:
- a first source/drain contact disposed between a first gate structure and a second gate structure;
- a dielectric cap disposed on the first source/drain contact, the dielectric cap extending above a top surface of the first gate structure and the second gate structure;
- a gate contact jumper connecting the first gate structure with the second gate structure, wherein a portion of the gate contact jumper is disposed over the dielectric cap:
- a third gate structure adjacent the first gate structure;
- and
- a gate contact disposed on the third gate structure;
- a first source/drain region disposed between the first gate structure and the second gate structure;
- a second source/drain region disposed between the first gate structure and the third gate structure;
- and
- a second source/drain contact disposed on the second source/drain region;
- wherein the first source/drain contact is disposed on the first source/drain region;
- and
- wherein the gate contact is separated from the gate contact jumper by a dielectric layer.
10 more elements
Dependencies are inferred from the claim text.