Semiconductor device having side spacer patterns

A semiconductor device comprising:

• source/drain regions formed over a substrate;
• and
• channel patterns and gate structures formed between the source/drain regions in a horizontal direction,
• wherein the channel patterns are arranged to be spaced apart from each other over a surface of the substrate,
• wherein the gate structures are disposed between the channel patterns in the vertical direction,
• wherein the gate structures include:
• gate electrodes;
• gate insulating layers surrounding the gate electrodes;
• interfacial insulating layers surrounding the gate insulating layers;
• and
• first side spacer patterns and second side spacer patterns between the gate insulating layers and the source/drain regions,
• wherein inner surfaces of the second side spacer patterns are in contact with the gate insulating layers,
• wherein:
• the channel patterns include silicon (Si),
• the first side spacer patterns include germanium (Ge), and
• the second side spacer patterns include germanium oxide (GeO).

A semiconductor device comprising:

• source/drain regions formed over a substrate;
• and
• channel patterns and gate structures formed between the source/drain regions in a horizontal direction,
• wherein the channel patterns are arranged to be spaced apart from each other over a surface of the substrate in a vertical direction,
• wherein the gate structures are disposed between the channel patterns in the vertical direction, and
• wherein the gate structures include:
• side spacer patterns formed adjacent to the source/drain regions in a first horizontal direction;
• interfacial insulating layers formed over upper and lower surfaces of the channel patterns;
• gate insulating layers formed over surfaces of the side spacer patterns and over surfaces of the interfacial insulating layers;
• and
• gate electrodes over the gate insulating layers,
• wherein:
• the interfacial insulating layers includes a first material,
• the gate insulating layers includes a second material different from the first material.