Thin film transistor and array substrate

A thin film transistor comprising a substrate, the thin film transistor further comprising:

• a gate electrode disposed on a side surface of the substrate;
• a gate insulating layer covering the gate electrode and the substrate;
• an active layer disposed on a side surface of the gate insulating layer away from the gate electrode;
• a source electrode and a drain electrode disposed on a side surface of the active layer away from the gate insulating layer;
• a passivation layer configured to cover the active layer, the source electrode, and the drain electrode;
• wherein at least one of the gate electrode, the source electrode, or the drain electrode is a composite film layer, and the composite film layer comprises a first metal layer, a second metal layer, a low reflection functional layer, and an alloy layer which are arranged in layers,
• wherein the alloy layer comprises metal ions dispersed inside a first metal oxide layer, the metal ions comprise at least one of tantalum ion, niobium ion, titanium ion, nickel ion, or tungsten ion, and
• wherein the low reflection functional layer is a second metal oxide layer without any metal ions.