Silicon capacitor structure and method of manufacturing the same
AssigneePowerchip Semiconductor Manufacturing Corporation
InventorsLi-Peng Chang, Chih-Ling Hung, San-Jung Chang
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Abstract
The present invention provides a silicon capacitor structure, including a substrate, an interlayer dielectric (ILD) layer on the substrate, a capacitor recess extending from a surface of the ILD layer into the substrate, a capacitor in the capacitor recess, wherein the capacitor includes a bottom electrode on a surface of the capacitor recess, a capacitive dielectric layer on a surface of the bottom electrode, and a top electrode on a surface of the capacitive dielectric layer and filling up the capacitor recess.
Claims9
A method of manufacturing a silicon capacitor structure, comprising:
- providing a substrate;
- filling a first bottom electrode material in said substrate, wherein a surface of said first bottom electrode material is flush with a front surface of said substrate;
- forming semiconductor devices and an interlayer dielectric (ILD) layer on said front surface of said substrate;
- filling a second bottom electrode material in said ILD layer, wherein said second bottom electrode material is connected and aligned with said first bottom electrode material;
- performing a first etching process to form a through-silicon hole and a capacitor recess, wherein said through-silicon hole extends from said ILD layer into said substrate, and said capacitor recess extends from said second bottom electrode material into said first bottom electrode material, and a depth of said through-silicon hole in said substrate is larger than a depth of said first bottom electrode material in said substrate;
- and
- forming a dielectric layer and a metal layer sequentially in said through-silicon hole and said capacitor recess, wherein said dielectric layer and said metal layer in said through-silicon hole constitute a through-silicon via (TSV), and said dielectric layer and said metal layer in said capacitor recess and said first bottom electrode material and said second bottom electrode material constitute a capacitor.
Dependencies are inferred from the claim text.